1.5 μm process

The 1.5 μm process is the level of MOSFET semiconductor process technology that was reached around 1981–1982, by leading semiconductor companies such as Intel and IBM.

Products featuring 1.5 μm manufacturing process[edit]

NEC's 64 kbit SRAM memory chip introduced the 1.5 μm process in 1981.^[1]
Intel 80286 CPU launched in 1982 was manufactured using this process.^[2]
Intel introduced a 64 kbit DRAM memory chip using a 1.5 μm CMOS process in 1983.^[3]
Ricoh RF5C164 is a 1.5 μm silicon-gate CMOS sound chip used in the Sega CD video game console, released in 1991.^[4]
The Amiga Advanced Graphics Architecture (initially sold in 1992) included chips such as Lisa that were manufactured using a 1.5 μm CMOS process.^[5]
Intel used the 1.5-micron process on the HMOS-III technology.^[6]
Intel used the 1.4-micron process on the HMOS II-E technology.^[7]
Intel used the 1.5-micron process on the CHMOS III technology.^[8]^[9]

^ "Memory". STOL (Semiconductor Technology Online). Retrieved 25 June 2019.
^ "History of the Intel Microprocessor - Listoid". Archived from the original on 27 April 2015. Retrieved 19 April 2015.
^ Gealow, Jeffrey Carl (10 August 1990). "Impact of Processing Technology on DRAM Sense Amplifier Design" (PDF). Massachusetts Institute of Technology. pp. 149–166. Retrieved 25 June 2019 – via CORE.
^ Mega-CD Hardware Manual: PCM Sound Source (PDF). Sega. 14 October 1991. Retrieved 14 November 2020.
^ "Amiga Manual: Amiga 3000+ System Specification 1991".
^ Intel Corporation, "New Product Focus Components: 80286 Workhorses: Twice As Fast", Solutions, July/August 1985, Page 17
^ Intel Corporation, "NewsBit: Three New Pinouts For One-Megabit EPROMs Announced", Solutions, January/February 1986, Page 1
^ Rant, Jon; "CHMOS: Matching Process to Product", Intel Corporation, Solutions, January/February 1986, Page 17
^ Ormsby, Jon, Editor, "New Product Focus: Components: 82526 Works Magic Under The Hood", Intel Corporation, Microcomputer Solutions, May/June 1988, page 10

Preceded by 3 μm process	MOSFET semiconductor device fabrication process	Succeeded by 1 μm process

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Semiconductor device fabrication

MOSFET scaling (process nodes)
020 µm – 1968 010 µm – 1971 006 µm – 1974 003 µm – 1977 1.5 µm – 1981 001 µm – 1984 800 nm – 1987 600 nm – 1990 350 nm – 1993 250 nm – 1996 180 nm – 1999 130 nm – 2001 090 nm – 2003 065 nm – 2005 045 nm – 2007 032 nm – 2009 028 nm – 2010 022 nm – 2012 014 nm – 2014 010 nm – 2016 007 nm – 2018 005 nm – 2020 003 nm – 2022
Future 002 nm ~ 2024
Half-nodes Density CMOS Device (multi-gate) Moore's law Transistor count Semiconductor Industry Nanoelectronics
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